검색결과 : 78건
No. | Article |
---|---|
1 |
Cryo-EM structure of the Ebola virus nucleoprotein-RNA complex at 3.6 angstrom resolution Sugita Y, Matsunami H, Kawaoka Y, Noda T, Wolf M Nature, 563(7729), 137, 2018 |
2 |
The role of Olfr78 in the breathing circuit of mice Torres-Torrelo H, Ortega-Saenz P, Macias D, Omura M, Zhou T, Matsunami H, Johnson RS, Mombaerts P, Lopez-Barneo J Nature, 561(7724), E33, 2018 |
3 |
Split luciferase complementation assay for the analysis of G protein-coupled receptor ligand response in Saccharomyces cerevisiae Fukutani Y, Ishii J, Kondo A, Ozawa T, Matsunami H, Yohda M Biotechnology and Bioengineering, 114(6), 1354, 2017 |
4 |
Smelling Sulfur: Copper and Silver Regulate the Response of Human Odorant Receptor OR2T11 to Low-Molecular-Weight Thiols Li SJ, Ahmed L, Zhang RN, Pan Y, Matsunami H, Burger JL, Block E, Batista VS, Zhuang HY Journal of the American Chemical Society, 138(40), 13281, 2016 |
5 |
Conserved Residues Control Activation of Mammalian G Protein-Coupled Odorant Receptors de March CA, Yu YQ, Ni MJJ, Adipietro KA, Matsunami H, Ma MH, Golebiowski J Journal of the American Chemical Society, 137(26), 8611, 2015 |
6 |
Gap compression/extension mechanism of bacterial flagellar hook as the molecular universal joint Furuta T, Samatey FA, Matsunami H, Imada K, Namba K, Kitao A Journal of Structural Biology, 157(3), 481, 2007 |
7 |
Epitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition Wada K, Kimoto T, Nishikawa K, Matsunami H Journal of Crystal Growth, 291(2), 370, 2006 |
8 |
Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition Fujiwara H, Danno K, Kimoto T, Tojo T, Matsunami H Journal of Crystal Growth, 281(2-4), 370, 2005 |
9 |
Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD Wada A, Kimoto T, Nishikawa K, Matsunami H Materials Science Forum, 483, 85, 2005 |
10 |
Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes Fujiwara H, Kimoto T, Tojo T, Matsunami H Materials Science Forum, 483, 151, 2005 |