검색결과 : 12건
No. | Article |
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1 |
Manganese phosphide thin films and nanorods grown on gallium phosphide and on glass substrates Nateghi N, Lambert-Milot S, Menard D, Masut RA Journal of Crystal Growth, 442, 75, 2016 |
2 |
GaAs1-xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy Beaudry JN, Masut RA, Desjardins P Journal of Crystal Growth, 310(6), 1040, 2008 |
3 |
Organometallic vapor phase epitaxy of GaAs1-N-x(x) alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation Beaudry JN, Masut RA, Desjardins P, Wei R, Chicoine M, Bentoumi G, Leonelli R, Schiettekatte F, Guillon S Journal of Vacuum Science & Technology A, 22(3), 771, 2004 |
4 |
Empirical tight-binding calculations of the electronic structure of dilute III-V-N semiconductor alloys Turcotte S, Shtinkov N, Desjardins P, Masut RA, Leonelli R Journal of Vacuum Science & Technology A, 22(3), 776, 2004 |
5 |
Characterization GaAs1-xNx epitaxial layers by ion beam analysis Wei P, Chicoine M, Gujrathi S, Schiettekatte F, Beaudry JN, Masut RA, Desjardins P Journal of Vacuum Science & Technology A, 22(3), 908, 2004 |
6 |
Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study Shtinkov N, Turcotte S, Beaudry JN, Desjardins P, Masut RA Journal of Vacuum Science & Technology A, 22(4), 1606, 2004 |
7 |
Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine Frankland D, Masut RA, Leonelli R Journal of Vacuum Science & Technology A, 20(3), 1132, 2002 |
8 |
Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states Paki P, Leonelli R, Isnard L, Masut RA Journal of Vacuum Science & Technology A, 18(3), 956, 2000 |
9 |
Competing strain relaxation mechanisms in organometallic vapor-phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001) Desjardins P, Isnard L, Marchand H, Masut RA Journal of Vacuum Science & Technology A, 16(2), 776, 1998 |
10 |
Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001) Guillon S, Yip RYF, Desjardins P, Chicoine M, Bougrioua Z, Beaudoin M, Ait-Ouali A, Masut RA Journal of Vacuum Science & Technology A, 16(2), 781, 1998 |