화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Manganese phosphide thin films and nanorods grown on gallium phosphide and on glass substrates
Nateghi N, Lambert-Milot S, Menard D, Masut RA
Journal of Crystal Growth, 442, 75, 2016
2 GaAs1-xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy
Beaudry JN, Masut RA, Desjardins P
Journal of Crystal Growth, 310(6), 1040, 2008
3 Organometallic vapor phase epitaxy of GaAs1-N-x(x) alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation
Beaudry JN, Masut RA, Desjardins P, Wei R, Chicoine M, Bentoumi G, Leonelli R, Schiettekatte F, Guillon S
Journal of Vacuum Science & Technology A, 22(3), 771, 2004
4 Empirical tight-binding calculations of the electronic structure of dilute III-V-N semiconductor alloys
Turcotte S, Shtinkov N, Desjardins P, Masut RA, Leonelli R
Journal of Vacuum Science & Technology A, 22(3), 776, 2004
5 Characterization GaAs1-xNx epitaxial layers by ion beam analysis
Wei P, Chicoine M, Gujrathi S, Schiettekatte F, Beaudry JN, Masut RA, Desjardins P
Journal of Vacuum Science & Technology A, 22(3), 908, 2004
6 Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study
Shtinkov N, Turcotte S, Beaudry JN, Desjardins P, Masut RA
Journal of Vacuum Science & Technology A, 22(4), 1606, 2004
7 Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine
Frankland D, Masut RA, Leonelli R
Journal of Vacuum Science & Technology A, 20(3), 1132, 2002
8 Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states
Paki P, Leonelli R, Isnard L, Masut RA
Journal of Vacuum Science & Technology A, 18(3), 956, 2000
9 Competing strain relaxation mechanisms in organometallic vapor-phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)
Desjardins P, Isnard L, Marchand H, Masut RA
Journal of Vacuum Science & Technology A, 16(2), 776, 1998
10 Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001)
Guillon S, Yip RYF, Desjardins P, Chicoine M, Bougrioua Z, Beaudoin M, Ait-Ouali A, Masut RA
Journal of Vacuum Science & Technology A, 16(2), 781, 1998