화학공학소재연구정보센터
Journal of Vacuum Science & Technology A, Vol.22, No.4, 1606-1609, 2004
Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study
We present empirical tight-binding (TB) calculations of the electronic structure of GaAs1-xNx/GaAs (001) quantum wells (QWs) with small N concentrations (0