검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3 Liu HG, Wu JQ, Tao N, Firth A, Griswold EM, MacElwee TW, Bolognesi CR Journal of Crystal Growth, 267(3-4), 592, 2004 |
| 2 |
Fabrication of high performance GaN modulation doped field effect transistors Bardwell JA, Foulds I, Lamontagne B, Tang H, Webb JB, Marshall P, Rolfe SJ, Stapledon J, MacElwee TW Journal of Vacuum Science & Technology A, 18(2), 750, 2000 |
| 3 |
Characterization of AlGaN/GaN HEMT devices grown by MBE MacElwee TW, Bardwell JA, Tang H, Webb JB Materials Science Forum, 338-3, 1647, 2000 |
| 4 |
Limitations on threshold adjustment by backgating in fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors Tarr NG, Wang Y, Soreefan R, Snelgrove WM, Manning BM, Bazarjani S, MacElwee TW Journal of Vacuum Science & Technology A, 16(2), 838, 1998 |