화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 The effect of oxygen source on atomic layer deposited Al2O3 as blocking oxide in metal/aluminum oxide/nitride/oxide/silicon memory capacitors
Nikolaou N, Ioannou-Sougleridis V, Dimitrakis P, Normand P, Skarlatos D, Giannakopoulos K, Kukli K, Niinisto J, Ritala M, Leskela M
Thin Solid Films, 533, 5, 2013
2 Investigation of charge-trap memories with AlN based band engineered storage layers
Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B
Solid-State Electronics, 58(1), 68, 2011
3 Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices
Wang G, White MH
Solid-State Electronics, 52(10), 1491, 2008