화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 The impact of short channel and quantum effects on the MOS transistor mismatch
Difrenza R, Llinares P, Ghibaudo G
Solid-State Electronics, 47(7), 1161, 2003
2 A new model for the current factor mismatch in the MOS transistor
Difrenza R, Llinares P, Ghibaudo G
Solid-State Electronics, 47(7), 1167, 2003
3 1/f noise measurements in n-channel MOSFETs processed in 0.25 mu m technology - Extraction of BSIM3v3 noise parameters
Allogo YA, de Murcia M, Vildeuil JC, Valenza M, Llinares P, Cottin D
Solid-State Electronics, 46(3), 361, 2002
4 0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters
Vanmackelberg M, Raynaud C, Faynot O, Pelloie JL, Tabone C, Grouillet A, Martin F, Dambrine G, Picheta L, Mackowiak E, Llinares P, Sevenhans J, Compagne E, Fletcher G, Flandre D, Dessard V, Vanhoenacker D, Raskin JP
Solid-State Electronics, 46(3), 379, 2002
5 1/f noise in 0.18 mu m technology n-MOSFETs from subthreshold to saturation
Allogo YA, Marin M, de Murcia M, Llinares P, Cottin D
Solid-State Electronics, 46(7), 977, 2002
6 Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors
Niel S, Chantre A, Llinares P, Laurens M, Vincent G
Solid-State Electronics, 44(6), 963, 2000