검색결과 : 4건
No. | Article |
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1 |
The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacer Juang MH, Huang CW, Chang CW, Shye DC, Hwang CC, Wang JL, Jang SL Solid-State Electronics, 53(9), 1036, 2009 |
2 |
Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors Feng LW, Chang TC, Liu PT, Tu CH, Wu YC, Yang CY, Chang CY Thin Solid Films, 517(3), 1204, 2008 |
3 |
An optimization technique for parameter extraction of ultra-deep submicron LDD MOSFET's Hao Y, Yang LA, Yu CL Solid-State Electronics, 50(9-10), 1540, 2006 |
4 |
A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs Jang SL, Sheu CJ Solid-State Electronics, 44(7), 1305, 2000 |