화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacer
Juang MH, Huang CW, Chang CW, Shye DC, Hwang CC, Wang JL, Jang SL
Solid-State Electronics, 53(9), 1036, 2009
2 Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors
Feng LW, Chang TC, Liu PT, Tu CH, Wu YC, Yang CY, Chang CY
Thin Solid Films, 517(3), 1204, 2008
3 An optimization technique for parameter extraction of ultra-deep submicron LDD MOSFET's
Hao Y, Yang LA, Yu CL
Solid-State Electronics, 50(9-10), 1540, 2006
4 A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs
Jang SL, Sheu CJ
Solid-State Electronics, 44(7), 1305, 2000