검색결과 : 8건
No. | Article |
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1 |
Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks Martinez E, Gaumer C, Lhostis S, Licitra C, Silly M, Sirotti F, Renault O Applied Surface Science, 258(6), 2107, 2012 |
2 |
Investigation of charge-trap memories with AlN based band engineered storage layers Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B Solid-State Electronics, 58(1), 68, 2011 |
3 |
Application of scatterometric porosimetry to characterize porous ultra low-k patterned layers Licitra C, Bouyssou R, El Kodadi M, Haberfehlner G, Chevolleau T, Hazart J, Virot L, Besacier M, Schiavone P, Bertin F Thin Solid Films, 519(9), 2825, 2011 |
4 |
Scatterometric porosimetry: A new characterization technique for porous material patterned structures Bouyssou R, El Kodadi M, Licitra C, Chevolleau T, Besacier M, Posseme N, Joubert O, Schiavone P Journal of Vacuum Science & Technology B, 28(4), L31, 2010 |
5 |
Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films Licitra C, Bouyssou R, Chevolleau T, Bertin F Thin Solid Films, 518(18), 5140, 2010 |
6 |
Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget Martinez E, Leroux C, Benedetto N, Gaumer C, Charbonnier M, Licitra C, Guedj C, Fillot F, Lhostis S Journal of the Electrochemical Society, 156(8), G120, 2009 |
7 |
Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials Darnon M, Chevolleau T, David T, Posseme N, Ducote J, Licitra C, Vallier L, Joubert O, Torres J Journal of Vacuum Science & Technology B, 26(6), 1964, 2008 |
8 |
Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories Molas G, Bocquet M, Buckley J, Grampeix H, Gely M, Colonna JP, Licitra C, Rochat N, Veyront T, Garros X, Martin F, Brianceau P, Vidal V, Bongiorno C, Lombardo S, De Salvo B, Deleonibus S Solid-State Electronics, 51(11-12), 1540, 2007 |