검색결과 : 6건
No. | Article |
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1 |
Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs Simoen E, Firrincieli A, Leys F, Loo R, De Jaeger B, Mitard J, Claeys C Thin Solid Films, 518(9), 2493, 2010 |
2 |
The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs Caymax M, Leys F, Mitard J, Martens K, Yang LJ, Pourtois G, Vandervorst W, Meuris M, Loo R Journal of the Electrochemical Society, 156(12), H979, 2009 |
3 |
Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth Collaert N, Rooyackers R, Hikavyy A, Dixit A, Leys F, Verheyen P, Loo R, Jurczak M, Biesemans S Thin Solid Films, 517(1), 101, 2008 |
4 |
Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S Solid-State Electronics, 50(4), 587, 2006 |
5 |
Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates Van Elshocht S, Caymax M, Conard T, De Gendt S, Hoflijk I, Houssa M, Leys F, Bonzom R, De Jaeger B, Van Steenbergen J, Vandervorst W, Heyns M, Meuris M Thin Solid Films, 508(1-2), 1, 2006 |
6 |
Characteristics of selective epitaxial SiGe deposition processes for recessed source/drain applications Loo R, Verheyen P, Eneman G, Rooyackers R, Leys F, Shamiryan D, De Meyer K, Absil PP, Caymax M Thin Solid Films, 508(1-2), 266, 2006 |