화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs
Simoen E, Firrincieli A, Leys F, Loo R, De Jaeger B, Mitard J, Claeys C
Thin Solid Films, 518(9), 2493, 2010
2 The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs
Caymax M, Leys F, Mitard J, Martens K, Yang LJ, Pourtois G, Vandervorst W, Meuris M, Loo R
Journal of the Electrochemical Society, 156(12), H979, 2009
3 Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth
Collaert N, Rooyackers R, Hikavyy A, Dixit A, Leys F, Verheyen P, Loo R, Jurczak M, Biesemans S
Thin Solid Films, 517(1), 101, 2008
4 Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions
Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S
Solid-State Electronics, 50(4), 587, 2006
5 Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates
Van Elshocht S, Caymax M, Conard T, De Gendt S, Hoflijk I, Houssa M, Leys F, Bonzom R, De Jaeger B, Van Steenbergen J, Vandervorst W, Heyns M, Meuris M
Thin Solid Films, 508(1-2), 1, 2006
6 Characteristics of selective epitaxial SiGe deposition processes for recessed source/drain applications
Loo R, Verheyen P, Eneman G, Rooyackers R, Leys F, Shamiryan D, De Meyer K, Absil PP, Caymax M
Thin Solid Films, 508(1-2), 266, 2006