| 1 |
The effect of sulphur-terminated GaAs substrates on the MOVPE growth of CuGaS2 thin films
Berndt PR, Botha JR, Branch MS, Leitch AWR, Kirmse H, Neumann W, Weber J
Thin Solid Films, 515(15), 5925, 2007 |
| 2 |
Defect chemistry in CuGaS2 thin films: A photoluminescence study
Botha JR, Branch MS, Berndt PR, Leitch AWR, Weber J
Thin Solid Films, 515(15), 6246, 2007 |
| 3 |
Homogeneity of single phase Cu(In,Ga)Se-2 produced by selenisation of metal precursors: An optical investigation
Botha JR, Schumacher SA, Leitch AWR, Alberts V
Thin Solid Films, 511, 316, 2006 |
| 4 |
Structural and optical characterisation of CuGaS2 thin films grown by MOVPE
Branch MS, Berndt PR, Leitch AWR, Botha JR, Weber J
Thin Solid Films, 480, 188, 2005 |
| 5 |
Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H-SiC
van Wyk E, Leitch AWR
Applied Surface Science, 221(1-4), 415, 2004 |
| 6 |
As-grown and process-related defects in Schottky barrier diodes fabricated on bulk off-axis n-type 6H-SiC
van Wyk E, Leitch AWR
Materials Science Forum, 457-460, 697, 2004 |
| 7 |
Photoluminescence characterisation of unintentional acceptors in MOVPE-grown GaInSb
Vankova V, Leitch AWR, Botha JR
Journal of Crystal Growth, 248, 279, 2003 |
| 8 |
Structure and morphology of CuGaS2 thin films
Branch MS, Berndt PR, Botha JR, Leitch AWR, Weber J
Thin Solid Films, 431-432, 94, 2003 |
| 9 |
Properties of CuIn(Se,S)(2) thin films prepared by two-step growth processes
Bekker J, Alberts V, Leitch AWR, Botha JR
Thin Solid Films, 431-432, 116, 2003 |
| 10 |
On the unusual nature of a DLTS-detected defect in bulk n-type 6H-SiC
van Wyk E, Leitch AWR
Materials Science Forum, 433-4, 383, 2002 |
