We report on a defect displaying unusually complex behaviour as detected during a systematic deep level transient spectroscopy (DLTS) study conducted on thermally evaporated Schottky barrier diodes (SBDs) fabricated on bulk n-type 6H-SiC wafers. To the best of our knowledge no mention has previously been made of this defect. The trap signature is given as Ec - (0.54(-0.03)(+0.02)) eV with an associated capture cross section of (2.5(-1.5)(+3.8)) x 10(-18) cm(2). The unusually complex thermal and electrical, as well as the apparent metastable behaviour of the defect is examined, as well as the role played in collaboration with a band of donor-like interface defects in contributing to the marked hysteresis effects recently encountered during rigorous electrical analyses of the diodes. The possibility that the defect is an oxide-related trap is proposed as the more feasible of two possible models.