화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 The atomic structure of the hydrogen saturated a-planes of 4H-SiC
Seyller T, Sieber N, Emtsev KV, Graupner R, Ley L, Tadich A, James D, Riley JD, Leckey RCG, Polcik M
Materials Science Forum, 457-460, 395, 2004
2 Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition
Seyller T, Gao K, Ley L, Ciobanu F, Pensl G, Tadich A, Riley JD, Leckey RCG
Materials Science Forum, 457-460, 1369, 2004
3 A high-resolution photoemission study hydrogen-terminated 6H-SiC surfaces
Sieber N, Seyller T, Ley L, Polcik M, James D, Riley JD, Leckey RCG
Materials Science Forum, 389-3, 713, 2002
4 Electronic and atomic structure of an ordered silicate adlayer on hexagonal SiC
Hollering M, Sieber N, Maier F, Ristein J, Ley L, Riley JD, Leckey RCG, Leisenberger F, Netzer F
Materials Science Forum, 338-3, 387, 2000