| 1 |
Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2
Latt KM, Park HS, Li S, Rong L, Osipowicz T, Zhu WG, Lee YK
Journal of Materials Science, 37(10), 1941, 2002 |
| 2 |
Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structure
Latt KM, Park HS, Seng HL, Osipowicz T, Lee YK
Journal of Materials Science, 37(19), 4181, 2002 |
| 3 |
Study on electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure
Latt KM, Lee YK, Van Kan JA, Mahabai AA
Journal of Materials Science, 36(22), 5475, 2001 |
| 4 |
Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure
Latt KM, Sher-Yi C, Osipowicz T, Lee K, Lee YK
Journal of Materials Science, 36(23), 5705, 2001 |
| 5 |
Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide
Latt KM, Lee YK, Seng HL, Osipowicz T
Journal of Materials Science, 36(24), 5845, 2001 |
| 6 |
Study of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure
Latt KM, Lee K, Lee YK
Journal of Materials Science Letters, 20(6), 559, 2001 |
| 7 |
High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5%Cu/Ti/SiO2/Si structure
Li S, Lee YK, Gao W, White T, Dong ZL, Latt KM
Journal of Vacuum Science & Technology B, 19(2), 388, 2001 |
| 8 |
Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO2/Si structure
Lee YK, Latt KM, Jaehyung K, Osipowicz T, Chiam SY, Lee K
Journal of Materials Science, 35(23), 5857, 2000 |
