검색결과 : 37건
No. | Article |
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1 |
Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol Liu J, Lennard WN, Goncharova LV, Landheer D, Wu XH, Rushworth SA, Jones AC Journal of the Electrochemical Society, 156(8), G89, 2009 |
2 |
Si nanocrystal memory devices self-assembled by in situ rapid thermal annealing of ultrathin a-Si on SiO2 Chen JH, Lei TF, Landheer D, Wu X, Liu J, Chao TS Electrochemical and Solid State Letters, 10(10), H302, 2007 |
3 |
Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation Chen JH, Huang TB, Wu XH, Landheer D, Lei TF, Chao TS Journal of the Electrochemical Society, 154(1), G18, 2007 |
4 |
Annealing effects on the chemical configuration of uncapped and (poly-Si)-capped HfOxNy films deposited on Si(001) Couillard M, Lee MS, Landheer D, Wu X, Botton GA Journal of the Electrochemical Society, 152(8), F101, 2005 |
5 |
Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEM Ahn H, Chen HW, Landheer D, Wu X, Chou LJ, Chao TS Thin Solid Films, 455-56, 318, 2004 |
6 |
Depth profiling of ultrathin films using medium energy ion scattering Kim J, Lennard WN, McNorgan CP, Hendriks J, Mitchell IV, Landheer D, Gredley J Current Applied Physics, 3(1), 75, 2003 |
7 |
Structure and thermal stability of MOCVD ZrO2 films on Si (100) Wu X, Landheer D, Graham MJ, Chen HW, Huang TY, Chao TS Journal of Crystal Growth, 250(3-4), 479, 2003 |
8 |
Ultrathin zirconium silicate films deposited on Si(100) using Zr(O-i-Pr)(2)(thd)(2), Si(O-t-Bu)(2)(thd)(2), and nitric oxide Chen HW, Huang TY, Landheer D, Wu X, Moisa S, Sproule GI, Kim JK, Lennard WN, Chao TS Journal of the Electrochemical Society, 150(7), C465, 2003 |
9 |
Structural comparison of gadolinium and lanthanum silicate films on Si(100) by HRTEM, EELS and SAED Wu X, Landheer D, Quance T, Graham MJ, Botton GA Applied Surface Science, 200(1-4), 15, 2002 |
10 |
Composition and growth of thin anodic oxides formed on InP (100) Djenizian T, Sproule GI, Moisa S, Landheer D, Wu X, Santinacci L, Schmuki P, Graham MJ Electrochimica Acta, 47(17), 2733, 2002 |