Si-nanocrystal memories have been fabricated using the thermal agglomeration of an ultrathin (0.9-3.5 nm) amorphous Si (a-Si) film. The a-Si was deposited by electron beam evaporation followed by in situ annealing at 850 C for 5 min. Hemispherical nanocrystals were obtained with a dot density up to 3.9 x 10(11) cm(-2), and a stored charge density of 4.1 x 10(12) cm(-2) (electron + hole) was achieved. The data retention characteristics of nanocrystal-embedded devices have shown a 1 V memory window after 100 h. Well-separated Si nanocrystals with a 23-32% surface-coverage ratio have been successfully demonstrated. The process compatibility of the proposed technique was also discussed. (C) 2007 The Electrochemical Society.