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No. | Article |
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1 |
Type II GaAsxSb1-x/InAs (x < 0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution Moiseev KD, Romanov VV, Voronina TI, Lagunova TS, Mikhailova MP, Yakovlev YP Journal of Crystal Growth, 310(23), 4846, 2008 |