Previous Article Next Article Table of Contents Journal of Crystal Growth, Vol.310, No.23, 4846-4849, 2008 DOI10.1016/j.jcrysgro.2008.07.023 Export Citation Type II GaAsxSb1-x/InAs (x < 0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution Moiseev KD, Romanov VV, Voronina TI, Lagunova TS, Mikhailova MP, Yakovlev YP Ternary GaAsxSb1-x solid solutions in the composition range 0.05 Keywords:Metalorganic vapor phase epitaxy;Antimonides;Semiconducting III-V materials Please enable JavaScript to view the comments powered by Disqus.
