화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs
Alatise OM, Kwa KSK, Olsen SH, O'Neill AG
Solid-State Electronics, 54(3), 327, 2010
2 Doubling speed using strained Si/SiGe CMOS technology
Olsen SH, Temple M, O'Neill AG, Paul DJ, Chattopadhyay S, Kwa KSK, Driscoll LS
Thin Solid Films, 508(1-2), 338, 2006
3 Strained Si MOSFETs on relaxed SiGe platforms: performance and challenges
Chattopadhyay S, Driscoll LD, Kwa KSK, Olsen SH, O'Neill AG
Solid-State Electronics, 48(8), 1407, 2004