검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Formation of SiC delta-doped-layer structures by CVD Takahashi K, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M Materials Science Forum, 457-460, 743, 2004 |
| 2 |
Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD Takahashi K, Uchida M, Yokogawa T, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M Materials Science Forum, 389-3, 243, 2002 |
| 3 |
Delta-doped layers of SiC grown by'pulse doping' technique Takahashi K, Yokogawa T, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M Materials Science Forum, 389-3, 247, 2002 |
| 4 |
4H-SiC delta-doped accumulation-channel MOS FET Yokogawa T, Takahashi K, Kusumoto O, Uchida M, Yamashita K, Kitabatake M Materials Science Forum, 389-3, 1077, 2002 |
| 5 |
SiC vertical DACFET (Vertical delta-doped accumulation channel MOSFET) Kusumoto O, Yokogawa T, Yamashita K, Takahashi K, Kitabatake M, Uchida M, Miyanaga R Materials Science Forum, 389-3, 1211, 2002 |
| 6 |
SiC delta-doped-layer structures and DACFET Takahashi K, Kusumoto O, Uchida M, Yamashita K, Kitabatake M Materials Science Forum, 433-4, 629, 2002 |