화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition
Genz F, Lenz A, Eisele H, Ivanova L, Timm R, Pohl UW, Dahne M, Franke D, Kunzel H
Journal of Vacuum Science & Technology B, 28(4), C5E1, 2010
2 MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits
Gibis R, Kizuki H, Albrecht P, Harde P, Urmann G, Kaiser R, Kunzel H
Journal of Crystal Growth, 209(2-3), 463, 2000
3 MOMBE selective infill growth of InP/GaInAs for quantum dot formation
Gibis R, Schelhase S, Steingruber R, Urmann G, Kunzel H, Thiel S, Stier O, Bimberg D
Journal of Crystal Growth, 209(2-3), 499, 2000
4 Selective infill metalorganic molecular beam epitaxy of InP : Si n(+)/n(-) layers for buried collector double heterostructure bipolar transistors
Schelhase S, Bottcher J, Gibis R, Harde P, Paraskevopoulos A, Kunzel H
Journal of Vacuum Science & Technology B, 16(1), 210, 1998
5 Improved Inverted Alinga/GaInAs 2-Dimensional Electron-Gas Structures for High-Quality Pseudomorphic Double-Heterojunction Alinas/GaInAs High-Electron-Mobility Transistor Devices
Kunzel H, Bach HG, Bottcher J, Heedt C
Journal of Vacuum Science & Technology B, 12(5), 2910, 1994