검색결과 : 6건
No. | Article |
---|---|
1 |
4H-SiC DMOSFETs for high speed switching applications Ryu SH, Krishnaswami S, Das M, Richmond J, Agarwal A, Palmour J, Scofield J Materials Science Forum, 483, 797, 2005 |
2 |
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C Materials Science Forum, 483, 901, 2005 |
3 |
Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields Das MK, Sumakeris JJ, Hull BA, Richmond J, Krishnaswami S, Powell AR Materials Science Forum, 483, 965, 2005 |
4 |
Development of 10 kV 4H-SiC power DMOSFETs Ryu SH, Agarwal A, Krishnaswami S, Richmond J, Palmour J Materials Science Forum, 457-460, 1385, 2004 |
5 |
Composition dependence of frequency power law of ionic conductivity of glasses Jain H, Krishnaswami S Solid State Ionics, 105(1-4), 129, 1998 |
6 |
Statistical-mechanically exact simulation of polymer conformation in an external field Krishnaswami S, Ramkrishna D, Caruthers JM Journal of Chemical Physics, 107(15), 5929, 1997 |