화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 4H-SiC DMOSFETs for high speed switching applications
Ryu SH, Krishnaswami S, Das M, Richmond J, Agarwal A, Palmour J, Scofield J
Materials Science Forum, 483, 797, 2005
2 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C
Materials Science Forum, 483, 901, 2005
3 Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields
Das MK, Sumakeris JJ, Hull BA, Richmond J, Krishnaswami S, Powell AR
Materials Science Forum, 483, 965, 2005
4 Development of 10 kV 4H-SiC power DMOSFETs
Ryu SH, Agarwal A, Krishnaswami S, Richmond J, Palmour J
Materials Science Forum, 457-460, 1385, 2004
5 Composition dependence of frequency power law of ionic conductivity of glasses
Jain H, Krishnaswami S
Solid State Ionics, 105(1-4), 129, 1998
6 Statistical-mechanically exact simulation of polymer conformation in an external field
Krishnaswami S, Ramkrishna D, Caruthers JM
Journal of Chemical Physics, 107(15), 5929, 1997