검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm Cao XA, Yan CH, D'Evelyn MP, LeBoeuf SF, Kretchmer JW, Klinger R, Arthur SD, Merfeld DW Journal of Crystal Growth, 269(2-4), 242, 2004 |
| 2 |
Microwave power SiC MESFETs and GaNHEMTs Zhang AP, Rowland LB, Kaminsky EB, Kretchmer JW, Beaupre RA, Garrett JL, Tucker JB, Edward BJ, Foppes J, Allen AF Solid-State Electronics, 47(5), 821, 2003 |
| 3 |
Propagation of current-induced stacking faults and forward voltage degradation in 4H-SiC PiN diodes Stahlbush RE, Fedison JB, Arthur SD, Rowland LB, Kretchmer JW, Wang S Materials Science Forum, 389-3, 427, 2002 |
| 4 |
Progress towards a manufacturable SiC mixed analog-digital integrated circuit technology Brown D, McGrath D, Nielsen M, Krishnamurthy N, Kretchmer JW, Ghezzo M Materials Science Forum, 338-3, 1291, 2000 |
| 5 |
Al/C/B Co-implanted high-voltage 4H-SiC PiN junction rectifiers Fedison JB, Li Z, Khemka V, Ramungul N, Chow TP, Ghezzo M, Kretchmer JW, Elasser A Materials Science Forum, 338-3, 1367, 2000 |
| 6 |
Factors influencing the design and performance of 4H-SiC GTO thyristors Fedison JB, Chow TP, Ghezzo M, Kretchmer JW, Nielsen MC Materials Science Forum, 338-3, 1391, 2000 |