A silicon carbide (SiC) operational amplifier has been successfully demonstrated. Using n channel depletion mode MOSFETs, these devices have shown open loop gains higher than 45 dB, a unity gain bandwidth of 2.5 MHz, and a dynamic range of 84 dB. Close control of the doping and thickness of the deposited epitaxial layers and the use of analytical modeling to predict device properties have led to the successful fabrication of this SiC device. With a functional yield of 25%, this work indicates the feasibility of large area, complex SiC device manufacturing.