검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Method of activation energy analysis and application to individual cells of 256Mb DRAM in 110 nm technology Weber A, Birner A, Krautschneider W Solid-State Electronics, 50(4), 613, 2006 |
| 2 |
Interface analysis of atomic layer deposited-TiN gate electrodes on ultrathin SiO2 layers Sell B, Sanger A, Krautschneider W Journal of Vacuum Science & Technology B, 21(3), 931, 2003 |
| 3 |
Impact of parasitic elements on the performance of digital CMOS circuits with Gigabit feature size Schwantes S, Gottsche R, Krautschneider W Solid-State Electronics, 47(7), 1243, 2003 |
| 4 |
Chemical vapor deposition of tungsten silicide (WSix) for high aspect ratio applications Sell B, Sanger A, Schulze-Icking G, Pomplun K, Krautschneider W Thin Solid Films, 443(1-2), 97, 2003 |