검색결과 : 70건
| No. | Article |
|---|---|
| 1 |
Dependence of surface morphology at initial growth of CdTe on the II/VI on (211) Si substrates by vapor phase epitaxy using metallic Cd source Iso K, Gokudan Y, Shiraishi M, Nishikado M, Murakami H, Koukitu A Journal of Crystal Growth, 506, 185, 2019 |
| 2 |
Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy Takekawa N, Hayashida N, Ohzeki D, Yamaguchi A, Murakami H, Kumagai Y, Matsumoto K, Koukitu A Journal of Crystal Growth, 502, 7, 2018 |
| 3 |
Thick nonpolar m-plane and semipolar (10(1)over-bar(1)over-bar) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3 Iso K, Matsuda K, Takekawa N, Hikida K, Hayashida N, Murakami H, Koukitu A Journal of Crystal Growth, 461, 25, 2017 |
| 4 |
Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source Iso K, Murakami H, Koukitu A Journal of Crystal Growth, 470, 122, 2017 |
| 5 |
Influence of high-temperature processing on the surface properties of bulk AlN substrates Tojo S, Yamamoto R, Tanaka R, Thieu QT, Togashi R, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Murakami H, Collazo R, Koukitu A, Monemar B, Sitar Z, Kumagai Y Journal of Crystal Growth, 446, 33, 2016 |
| 6 |
Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor Murakami H, Takekawa N, Shiono A, Thieu QT, Togashi R, Kumagai Y, Matsumoto K, Koukitu A Journal of Crystal Growth, 456, 140, 2016 |
| 7 |
Growth of thick and high crystalline quality InGaN layers on GaN (000(1)over-bar) substrate using tri-halide vapor phase epitaxy Hirasaki T, Eriksson M, Thieu QT, Karlsson F, Murakami H, Kumagai Y, Monemar B, Holtz PO, Koukitu A Journal of Crystal Growth, 456, 145, 2016 |
| 8 |
High rate InN growth by two-step precursor generation hydride vapor phase epitaxy Togashi R, Thieu QT, Murakami H, Kumagai Y, Ishitani Y, Monemar B, Koukitu A Journal of Crystal Growth, 422, 15, 2015 |
| 9 |
Thermodynamic study of beta-Ga2O3 growth by halide vapor phase epitaxy Nomura K, Goto K, Togashi R, Murakami H, Kumagai Y, Kuramata A, Yamakoshi S, Koukitu A Journal of Crystal Growth, 405, 19, 2014 |
| 10 |
Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10(1)over-bar3) crystal on GaAs(110) by MOVPE Cho HC, Togashi R, Murakami H, Kumagai Y, Koukitu A Journal of Crystal Growth, 367, 122, 2013 |