beta-Ga2O3 growth by halide vapor phase epitaxy (HVPE) was investigated by thermodynamic analysis. Gad l and O-2 were determined to be appropriate precursors for the growth of beta-Ga2O3 by HVPE. When H-2 is not included in the carrier gas, growth is expected up to 1600 degrees C. However, with an increase of H-2 in the carrier gas, the driving force of Ga2O3 growth decreases. Stable growth at 1000 degrees C in an inert carrier gas requires an input VI/III ratio above 1. Experimental results for the homoepitaxial growth of beta-Ga2O3 using GaCl and O-2 as precursors and N-2 as a carrier gas show that beta-Ga2O3 growth by HVPE can be thermodynamically controlled. (C) 2014 Elsevier B.V. All rights reserved.