검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
High power lateral epitaxy MESFET technology in silicon carbide Konstantinov AO, Harris CI, Ray IC Materials Science Forum, 483, 853, 2005 |
| 2 |
Influence of gamma-ray and neutron irradiation on injection characteristics of 4H-SiC pn structures Strel'chuk AM, Kalinina EV, Konstantinov AO, Hallen A Materials Science Forum, 483, 993, 2005 |
| 3 |
Elimination of current instability and improvement of RF power performance usingSi(3)N(4) passivation in SiC lateral epitaxy MESFETs Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG Solid-State Electronics, 48(7), 1233, 2004 |
| 4 |
Sub-nanosecond semiconductor opening switches based on 4H-SiC p(+)p(o)n(+)-diodes Grekhov IV, Ivanov PA, Khristyuk DV, Konstantinov AO, Korotkov SV, Samsonova TP Solid-State Electronics, 47(10), 1769, 2003 |
| 5 |
High-performance silicon carbide MESFET utilizing lateral epitaxy Konstantinov AO, Harris CI, Ericsson P Materials Science Forum, 389-3, 1375, 2002 |
| 6 |
Reverse current recovery in 4H-SiC diodes with n- and p-base Ivanov PA, Grekhov IV, Konstantinov AO, Samsonova TP Materials Science Forum, 433-4, 855, 2002 |