검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
실리콘 기판위에서의 Cr-Doped SrZrO3 박막의 저항변화 특성 양민규, 고태국, 박재완, 이전국 Korean Journal of Materials Research, 20(5), 241, 2010 |
| 2 |
Highly ESD-reliable, nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer Liu CH, Lam TK, Ko TK, Chang SJ, Sun YX Journal of the Electrochemical Society, 155(4), H232, 2008 |
| 3 |
Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes Chang SJ, Shen CF, Chen WS, Ko TK, Kuo CT, Yu KH, Shei SC, Chiou YZ Electrochemical and Solid State Letters, 10(6), H175, 2007 |
| 4 |
AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers Ko TK, Chang SJ, Su YK, Lee ML, Chang CS, Lin YC, Shei SC, Sheu JK, Chen WS, Shen CF Journal of Crystal Growth, 283(1-2), 68, 2005 |
| 5 |
GaN MIS capacitors with Photo-CVD SiNxOy insulating layers Chang SJ, Wang CK, Su YK, Chang CS, Lin TK, Ko TK, Liu HL Journal of the Electrochemical Society, 152(6), G423, 2005 |
| 6 |
Electrochemical properties of LiMxCo1-xO2 [M = Mg, Zr] prepared by sol-gel process Kim HS, Ko TK, Na BK, Cho WI, Chao BW Journal of Power Sources, 138(1-2), 232, 2004 |