We proposed a simple method to reduce the current crowding effect of nitride-based light emitting diodes (LEDs) without extra dry etching and refill. It was found that we can achieve much better current spreading by inserting an insulating SiO2 layer between the epitaxial layer and the p-pad electrode. It was also found that we can enhance light output intensity by 22%. Furthermore, it was found that 20 mA forward voltage only increased slightly from 3.32 to 3.37 V with the insertion of the SiO2 layer. The reliability of the proposed LED is also good. (c) 2007 The Electrochemical Society.