검색결과 : 10건
No. | Article |
---|---|
1 |
High-quality SiC bulk single crystal growth based on simulation and experiment Nishizawa SI, Kato T, Kitou Y, Oyanagi N, Hirose F, Yamaguchi H, Bahng W, Arai K Materials Science Forum, 457-460, 29, 2004 |
2 |
Numerical simulation of heat and mass transfer in SiC sublimation growth Nishizawa S, Kato T, Kitou Y, Oyanagi N, Arai K Materials Science Forum, 389-3, 43, 2002 |
3 |
Characterization of inclusions in SiC bulk crystals grown by modified Lely method Hirose F, Kitou Y, Oyanagi N, Kato T, Nishizawa S, Arai K Materials Science Forum, 389-3, 75, 2002 |
4 |
Flux-controlled sublimation growth by an inner guide-tube Kitou Y, Bahng W, Kato T, Nishizawa S, Arai K Materials Science Forum, 389-3, 83, 2002 |
5 |
Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth Kato T, Oyanagi N, Kitou Y, Nishizawa S, Arai K Materials Science Forum, 389-3, 111, 2002 |
6 |
In-situ observation of silicon carbide sublimation growth by X-ray topography Kato T, Oyanagi N, Yamaguchi H, Nishizawa S, Khan MN, Kitou Y, Arai K Journal of Crystal Growth, 222(3), 579, 2001 |
7 |
Rapid enlargement of SiC single crystal using a cone-shaped platform Bahng W, Kitou Y, Nishizawa S, Yamaguchi H, Khan MN, Oyanagi N, Nishino S, Arai K Journal of Crystal Growth, 209(4), 767, 2000 |
8 |
Pressure effect in sublimation growth of bulk SiC Kitou Y, Bahng W, Nishizawa S, Nishino S, Arai K Materials Science Forum, 338-3, 83, 2000 |
9 |
Shape of SiC bulk single crystal grown by sublimation Nishizawa S, Kitou Y, Bahng W, Oyanagi N, Khan MN, Arai K Materials Science Forum, 338-3, 99, 2000 |
10 |
Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid Bahng W, Kitou Y, Nishizawa S, Yamaguchi H, Khan MN, Oyanagi N, Arai K, Nishino S Materials Science Forum, 338-3, 103, 2000 |