화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 High-quality SiC bulk single crystal growth based on simulation and experiment
Nishizawa SI, Kato T, Kitou Y, Oyanagi N, Hirose F, Yamaguchi H, Bahng W, Arai K
Materials Science Forum, 457-460, 29, 2004
2 Numerical simulation of heat and mass transfer in SiC sublimation growth
Nishizawa S, Kato T, Kitou Y, Oyanagi N, Arai K
Materials Science Forum, 389-3, 43, 2002
3 Characterization of inclusions in SiC bulk crystals grown by modified Lely method
Hirose F, Kitou Y, Oyanagi N, Kato T, Nishizawa S, Arai K
Materials Science Forum, 389-3, 75, 2002
4 Flux-controlled sublimation growth by an inner guide-tube
Kitou Y, Bahng W, Kato T, Nishizawa S, Arai K
Materials Science Forum, 389-3, 83, 2002
5 Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth
Kato T, Oyanagi N, Kitou Y, Nishizawa S, Arai K
Materials Science Forum, 389-3, 111, 2002
6 In-situ observation of silicon carbide sublimation growth by X-ray topography
Kato T, Oyanagi N, Yamaguchi H, Nishizawa S, Khan MN, Kitou Y, Arai K
Journal of Crystal Growth, 222(3), 579, 2001
7 Rapid enlargement of SiC single crystal using a cone-shaped platform
Bahng W, Kitou Y, Nishizawa S, Yamaguchi H, Khan MN, Oyanagi N, Nishino S, Arai K
Journal of Crystal Growth, 209(4), 767, 2000
8 Pressure effect in sublimation growth of bulk SiC
Kitou Y, Bahng W, Nishizawa S, Nishino S, Arai K
Materials Science Forum, 338-3, 83, 2000
9 Shape of SiC bulk single crystal grown by sublimation
Nishizawa S, Kitou Y, Bahng W, Oyanagi N, Khan MN, Arai K
Materials Science Forum, 338-3, 99, 2000
10 Enlargement of SiC single crystal: Enhancement of lateral growth using tapered graphite lid
Bahng W, Kitou Y, Nishizawa S, Yamaguchi H, Khan MN, Oyanagi N, Arai K, Nishino S
Materials Science Forum, 338-3, 103, 2000