검색결과 : 4건
No. | Article |
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1 |
Ion implantation - Tool for fabrication of advanced 4H-SiC devices Kalinina EV, Kholujanov G, Gol'dberg Y, Blank T, Onushkin G, Strel'chuk A, Violina G, Kossov V, Yafaev R, Hallen A, Konstantinov A Materials Science Forum, 389-3, 835, 2002 |
2 |
Electrical and optical study of 4H-SiC CVD epitaxial layers irradiated with swift heavy ions Kalinina E, Kholujanov G, Onushkin G, Davydov D, Strel'chuk A, Zubrilov A, Hallen A, Konstantinov A, Skuratov V, Stano J Materials Science Forum, 433-4, 467, 2002 |
3 |
Gettering effect with Al implanted into 4H-SiC CVD epitaxial layers Kalinina E, Kholujanov G, Sitnikova A, Kossov V, Yafaev R, Pensl G, Reshanov S, Hallen A, Konstantinov A Materials Science Forum, 433-4, 637, 2002 |
4 |
Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers Kalinina E, Kholujanov G, Solov'ev V, Strel'chuk A, Kossov V, Yafaev R, Kovarskii, Shchukarev A, Obyden S, Saparin G, Ivannikov P, Hallen A, Konstantinov A Applied Surface Science, 184(1-4), 323, 2001 |