화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Ion implantation - Tool for fabrication of advanced 4H-SiC devices
Kalinina EV, Kholujanov G, Gol'dberg Y, Blank T, Onushkin G, Strel'chuk A, Violina G, Kossov V, Yafaev R, Hallen A, Konstantinov A
Materials Science Forum, 389-3, 835, 2002
2 Electrical and optical study of 4H-SiC CVD epitaxial layers irradiated with swift heavy ions
Kalinina E, Kholujanov G, Onushkin G, Davydov D, Strel'chuk A, Zubrilov A, Hallen A, Konstantinov A, Skuratov V, Stano J
Materials Science Forum, 433-4, 467, 2002
3 Gettering effect with Al implanted into 4H-SiC CVD epitaxial layers
Kalinina E, Kholujanov G, Sitnikova A, Kossov V, Yafaev R, Pensl G, Reshanov S, Hallen A, Konstantinov A
Materials Science Forum, 433-4, 637, 2002
4 Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers
Kalinina E, Kholujanov G, Solov'ev V, Strel'chuk A, Kossov V, Yafaev R, Kovarskii, Shchukarev A, Obyden S, Saparin G, Ivannikov P, Hallen A, Konstantinov A
Applied Surface Science, 184(1-4), 323, 2001