| 1 |
First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy
Bui KM, Iwata JI, Kangawa Y, Shiraishi K, Shigeta Y, Oshiyama A
Journal of Crystal Growth, 507, 421, 2019 |
| 2 |
Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As-2, H-2 and N-2
Valencia H, Kangawa Y, Kakimoto K
Journal of Crystal Growth, 468, 557, 2017 |
| 3 |
First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN
Sekiguchi K, Shirakawa H, Yamamoto Y, Araidai M, Kangawa Y, Kakimoto K, Shiraishi K
Journal of Crystal Growth, 468, 950, 2017 |
| 4 |
Ab initio study of GaAs(100) surface stability over AS(2), H-2 and N-2 as a model for vapor-phase epitaxy of GaAs1-xNx
Valencia H, Kangawa Y, Kakimoto K
Journal of Crystal Growth, 432, 6, 2015 |
| 5 |
Role of the Surface N-H Molecular Layer in High Quality In-RICH InGaN Growth by MOVPE
Yayama T, Kangawa Y, Kakimoto K
Journal of Chemical Engineering of Japan, 47(7), 615, 2014 |
| 6 |
Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge
Kawano J, Kangawa Y, Ito T, Kakimoto K, Koukitu A
Journal of Crystal Growth, 343(1), 105, 2012 |
| 7 |
Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth
Kawamura T, Kangawa Y, Kakimoto K, Suzuki Y
Journal of Crystal Growth, 351(1), 32, 2012 |
| 8 |
Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory
Shiramomo T, Gao B, Mercier F, Nishizawa S, Nakano S, Kangawa Y, Kakimoto K
Journal of Crystal Growth, 352(1), 177, 2012 |
| 9 |
Possibility of AlN growth using Li-Al-N solvent
Kangawa Y, Kakimoto K
Journal of Crystal Growth, 312(18), 2569, 2010 |
| 10 |
Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE
Kangawa Y, Kakimoto K, Ito T, Koukitu A
Journal of Crystal Growth, 311(3), 463, 2009 |
