검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE Cho YS, Hardtdegen H, Kaluza N, von der Ahe M, Breuer U, Bochem HP, Ruterana P, Schmalbuch K, Wenzel D, Schapers T, Beschoten B, Grutzmacher D, Luth H Journal of Crystal Growth, 312(1), 1, 2009 |
| 2 |
Influence of the reactor inlet configuration on the AlGaN growth efficiency Yakovlev EV, Talalaev RA, Kaluza N, Hardtdegen H, Bay HL Journal of Crystal Growth, 298, 413, 2007 |
| 3 |
The growth mechanism of GaN with different H-2/N-2 carrier gas ratios Cho YS, Hardtdegen H, Kaluza N, Steins R, Heidelberger G, Luth H Journal of Crystal Growth, 307(1), 6, 2007 |
| 4 |
Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0001) Meijers R, Calarco R, Kaluza N, Hardtdegen H, Ahe MVD, Bay HL, Luth H, Buchmeier M, Burgler DE Journal of Crystal Growth, 283(3-4), 500, 2005 |
| 5 |
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE Steins R, Kaluza N, Hardtdegen H, Zorn M, Haberland K, Zettler JT Journal of Crystal Growth, 272(1-4), 81, 2004 |
| 6 |
MOVPE GaN growth: determination of activation energy using in-situ reflectometry Kaluza N, Steins R, Hardtdegen H, Lueth H Journal of Crystal Growth, 272(1-4), 100, 2004 |
| 7 |
MOVPE process for horizontal reactors with reduced parasitic deposition Hardtdegen H, Kaluza N, Steins R, Schmidt R, Wirtz K, Yakovlev EV, Talalaev RA, Makarov YN Journal of Crystal Growth, 272(1-4), 407, 2004 |