검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Effect of the metal composition on the electrical and thermal properties of Au/Pd/Ti/Pd contacts to p-type SiC Kolaklieva L, Kakanakov R, Marinova T, Lepoeva G Materials Science Forum, 483, 749, 2005 |
| 2 |
The reactive neutral beam etching of SiC and its application in p-n junction periphery protection. Sarov G, Cholakova T, Kakanakov R Materials Science Forum, 483, 769, 2005 |
| 3 |
High temperature and high power stability investigation of Al-based ohmic contacts to p-type 4H-SiC Kakanakov R, Kasamakova-Kolaklieva L, Hristeva N, Lepoeva G, Gomes JB, Avramova I, Marinova T Materials Science Forum, 457-460, 877, 2004 |
| 4 |
4H-SiC Power Schottky diodes. On the way to solve size limiting issues Syrkin A, Dmitriev V, Soukhoveev V, Mynbaeva M, Kakanakov R, Hallin C, Janzen E Materials Science Forum, 457-460, 985, 2004 |
| 5 |
P-n junction periphery protection of 4H-SiC power p-i-n diodes using epitaxy and dry etching Sarov G, Cholakova T, Kakanakov R Materials Science Forum, 457-460, 1005, 2004 |
| 6 |
Reliable ohmic contacts to LPE p-type 4H-SiC for high-power p-n diode Kakanakov R, Kassamakova L, Hristeva N, Lepoeva G, Kuznetsov N, Zekentes K Materials Science Forum, 389-3, 917, 2002 |
| 7 |
Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC Kassamakova L, Kakanakov R, Yakimova R, Kakanakova-Georgieva A, Syvajarvi M, Wilzen L, Janzen E Materials Science Forum, 389-3, 929, 2002 |
| 8 |
Characteristics of Ni Schottky contacts on compensated 4H-SiC layers Kasamakova-Kolaklieva L, Yakimova R, Kakanakov R, Kakanakova-Georgieva A, Syvajarvi M, Janzen E Materials Science Forum, 433-4, 709, 2002 |
| 9 |
Pd-based ohmic contacts to LPE 4H-SiC with improved thermal stability Kassamakova-Kolaklieva L, Kakanakov R, Cimalla V, Hristeva N, Lepoeva G, Kuznetsov N, Zekentes K Materials Science Forum, 433-4, 713, 2002 |
| 10 |
4H-SiC pn diode grown by LPE method for high power applications Kuznetsov N, Bauman D, Gavrilin A, Kassamakova L, Kakanakov R, Sarov G, Cholakova T, Zekentes K, Dmitriev V Materials Science Forum, 433-4, 867, 2002 |