검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Junctionless nanowire transistors parameters extraction based on drain current measurements Trevisoli R, Doria RT, de Souza M, Barraud S, Pavanello MA Solid-State Electronics, 158, 37, 2019 |
| 2 |
Series resistance in different operation regime of junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 141, 92, 2018 |
| 3 |
Impact of series resistance on the operation of junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 129, 103, 2017 |
| 4 |
Behavior of subthreshold conduction in junctionless transistors Park SJ, Jeon DY, Montes L, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 124, 58, 2016 |
| 5 |
Low-temperature electrical characterization of junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 80, 135, 2013 |
| 6 |
Effects of channel width variation on electrical characteristics of tri-gate Junction less transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 81, 58, 2013 |
| 7 |
Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 81, 101, 2013 |
| 8 |
A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 81, 113, 2013 |
| 9 |
New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 89, 139, 2013 |
| 10 |
Revisited parameter extraction methodology for electrical characterization of junctionless transistors Jeon DY, Park SJ, Mouis M, Berthome M, Barraud S, Kim GT, Ghibaudo G Solid-State Electronics, 90, 86, 2013 |