검색결과 : 41건
| No. | Article |
|---|---|
| 1 |
Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates Jinno D, Otsuki S, Sugimori S, Daicho H, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I Journal of Crystal Growth, 484, 50, 2018 |
| 2 |
Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN Jinno D, Otsuki S, Sugimori S, Daicho H, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I Journal of Crystal Growth, 480, 90, 2017 |
| 3 |
Homoepitaxial growth of AIN layers on freestanding AIN substrate by metalorganic vapor phase epitaxy Morishita T, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I Journal of Crystal Growth, 390, 46, 2014 |
| 4 |
In situ X-ray diffraction monitoring of GalnN/GaN superlattice during organometalic vapor phase epitaxy growth Yamamoto T, Iida D, Kondo Y, Sowa M, Umeda S, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I Journal of Crystal Growth, 393, 108, 2014 |
| 5 |
Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method Iwaya M, Yamamoto T, Tanaka D, Iida D, Kamiyama S, Takeuchi T, Akasaki I Journal of Crystal Growth, 401, 367, 2014 |
| 6 |
MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate Isobe Y, Ikki H, Sakakibara T, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I, Sugiyama T, Amano H, Imade M, Mori Y Journal of Crystal Growth, 351(1), 126, 2012 |
| 7 |
In situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth of low-temperature-GaN buffer layer Iida D, Sowa M, Kondo Y, Tanaka D, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I Journal of Crystal Growth, 361, 1, 2012 |
| 8 |
White light-emitting diode based on fluorescent SiC Kamiyama S, Iwaya M, Takeuchi T, Akasaki I, Yakimova R, Syvajarvi M Thin Solid Films, 522, 23, 2012 |
| 9 |
Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy Iida D, Tamura K, Iwaya M, Kamiyama S, Amano H, Akasaki I Journal of Crystal Growth, 312(21), 3131, 2010 |
| 10 |
Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer Asai T, Nagata K, Mori T, Nagamatsu K, Iwaya M, Kamiyama S, Amano H, Akasaki I Journal of Crystal Growth, 311(10), 2850, 2009 |