MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate

Isobe Y; Ikki H; Sakakibara T; Iwaya M; Takeuchi T; Kamiyama S; Akasaki I; Sugiyama T; Amano H; Imade M; Mori Y

Journal of Crystal Growth, Vol.351, No.1, 126-130, 2012

DOI10.1016/j.jcrysgro.2012.04.030 Export Citation

MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate

Isobe Y, Ikki H, Sakakibara T, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I, Sugiyama T, Amano H, Imade M, Mori Y

We investigated unintentionally doped nonpolar a- and m-plane GaN layers grown by metalorganic vapor phase epitaxy under several sets of conditions on freestanding a- and m-plane GaN substrates. Oxygen contamination in a-plane GaN is greatly reduced by increasing the V/III ratio during growth. As a result, a high-resistivity GaN buffer layer for an AlGaN/GaN heterostructure field-effect transistor was realized. (c) 2012 Elsevier B.V. All rights reserved.

Keywords:Impurities;Metalorganic vapor phase epitaxy;Semiconducting gallium compounds;High electron mobility transistors