검색결과 : 1건
No. | Article |
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1 |
Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device Xu QX, Xu G, Zhou H, Zhu H, Liu J, Wang Y, Li J, Xiang J, Liang Q, Wu H, Zhong J, Xu M, Xu W, Ma X, Wang X, Tong X, Chen D, Yan J, Zhao C, Ye T Solid-State Electronics, 115, 26, 2016 |