Attainment of dual band-edge effective work functions by using a single metal gate and single high k gate dielectric via P/BF2 implantation into a TiN metal gate for HP HKMG CMOS device applications are investigated under a gate-last process flow for the first time. The flat band voltage (VFB) modulations of about -750 mV/570 mV for N-/P-type MOS device with P/BF2 implanted TiN/HfO2/ILSiO2 gate stack are obtained respectively in the experiment range. Suitable low threshold voltages of CMOSFETs are gotten while simultaneously shrinking the EOT. The effects of P/BF2 ion implantation energy, dose and TiN gate thickness on the properties of implanted TiN/HfO2/ILSiO2 gate stack are studied, the possible mechanisms are discussed. This technique has been successfully integrated into the fabrications of aggressively scaled HP HKMG CMOSFETs and 32 CMOS frequency dividers under a gate-last process flow. (C) 2015 Elsevier Ltd. All rights reserved.