| 1 |
Inkjet printing satellite-free silver electrodes array in a-IGZO TFTs by regulating piezoelectric waveforms
Ning HL, Deng PM, Yang CG, Yao RH, Tao RQ, Chen JQ, Zhou YC, Fang ZQ, Wu WJ, Peng JB
Molecular Crystals and Liquid Crystals, 676(1), 36, 2018 |
| 2 |
The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress
Rhee J, Choi S, Kang H, Kim JY, Ko D, Ahn G, Jung H, Choi SJ, Kim DM, Kim DH
Solid-State Electronics, 140, 90, 2018 |
| 3 |
Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition
Geng GZ, Liu GX, Shan FK, Liu A, Zhang Q, Lee WJ, Shin BC, Wu HZ
Current Applied Physics, 14, S2, 2014 |
| 4 |
Drain bias effect on the instability of amorphous indium gallium zinc oxide thin film transistor
Seo SB, Park HS, Jeon JH, Choe HH, Seo JH, Yang S, Park SHK
Thin Solid Films, 547, 263, 2013 |
| 5 |
Active matrix touch sensor detecting time-constant change implemented by dual-gate IGZO TFTs
Tai YH, Chiu HL, Chou LS
Solid-State Electronics, 72, 67, 2012 |
| 6 |
Stability of a-InGaZnO thin film transistor under pulsed gate bias stress
Seo SB, Jeon JH, Park HS, Choe HH, Seo JH, Park SHK
Thin Solid Films, 521, 212, 2012 |
| 7 |
Light and bias stability of a-IGZO TFT fabricated by r.f. magnetron sputtering
Huh JY, Seo SB, Park HS, Jeon JH, Choe HH, Lee KW, Seo JH, Ryu MK, Park SHK, Hwang CS
Current Applied Physics, 11(5), S49, 2011 |
| 8 |
A study on the dry etching characteristics of indium gallium zinc oxide and molybdenum by the CCP-RIE system for the 4 mask process
Shin DC, Park KS, Park BR, Choe H, Jeon JH, Lee KW, Seo JH
Current Applied Physics, 11(5), S45, 2011 |
| 9 |
Role of high-k gate insulators for oxide thin film transistors
Lee SY, Chang S, Lee JS
Thin Solid Films, 518(11), 3030, 2010 |
