검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Analysis and characterization of a mechanical sensor to monitor stress in interconnect features Wilson CJ, Croes K, Tokei Z, Beyer GP, Gallacher BJ, Bull SJ, Horsfall AB, O'Neill AG Thin Solid Films, 519(1), 443, 2010 |
| 2 |
Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Maiti CK Applied Surface Science, 252(11), 3933, 2006 |
| 3 |
Aluminium implantation induced linear surface faults in 4H-SiC Wright NG, Vassilevski KV, Nikitina I, Horsfall AB, Johnson CM, Bhatnagar P, Tappin P Materials Science Forum, 483, 613, 2005 |
| 4 |
Effective edge termination design in SiCVJFET Bhatnagar P, Horsfall AB, Wright NG, O'Neill AG, Vassilevski KV, Johnson CM Materials Science Forum, 483, 877, 2005 |
| 5 |
Optimisation of heterostructure bipolar transistors in SiC Chen CC, Horsfall AB, Wright NG, O'Neill AG Materials Science Forum, 483, 913, 2005 |
| 6 |
Sensitivity of a rotating beam sensor for stress evaluation in aluminium thin films dos Santos JMM, Pina JCP, Batista AC, Horsfall AB, Wang K, Wright NG, Soare SM, Bull SJ, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM Materials Science Forum, 490-491, 649, 2005 |
| 7 |
Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG Solid-State Electronics, 49(3), 453, 2005 |
| 8 |
Reactive ion etching of Silicon Carbide with patterned Boron implantation Vassilevski K, Hedley J, Horsfall AB, Johnson CM, Wright NG Materials Science Forum, 457-460, 925, 2004 |
| 9 |
First principles derivation of carrier transport across metal - SiC barriers B-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG Materials Science Forum, 457-460, 969, 2004 |
| 10 |
Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation Vassilevski K, Horsfall AB, Johnson CM, Wright NG Materials Science Forum, 457-460, 989, 2004 |