화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Hydrogen-dominated plasma, due to silane depletion, for microcrystalline silicon deposition
Howling AA, Sobbia R, Hollenstein C
Journal of Vacuum Science & Technology A, 28(4), 989, 2010
2 Input silane concentration effect on the a-Si:H to mu c-Si:H transition width
Feltrin A, Strahm B, Bugnon G, Sculati-Meillaud F, Ballif C, Howling AA, Hollenstein C
Solar Energy Materials and Solar Cells, 94(3), 432, 2010
3 Non-intrusive plasma diagnostics for the deposition of large area thin film silicon
Howling AA, Strahm B, Hollenstein C
Thin Solid Films, 517(23), 6218, 2009
4 Optimization of the microcrystalline silicon deposition efficiency
Strahm B, Howling AA, Sansonnens L, Hollenstein C
Journal of Vacuum Science & Technology A, 25(4), 1198, 2007
5 Microcrystalline silicon deposited at high rate on large areas from pure silane with efficient gas utilization
Strahm B, Howling AA, Sansonnens L, Hollenstein C, Kroll U, Meier J, Ellert C, Feitknecht L, Ballif C
Solar Energy Materials and Solar Cells, 91(6), 495, 2007
6 Electromagnetic sources of nonuniformity in large area capacitive reactors
Howling AA, Sansonnens L, Hollenstein C
Thin Solid Films, 515(12), 5059, 2007
7 Application of the shaped electrode technique to a large area rectangular capacitively coupled plasma reactor to suppress standing wave nonuniformity
Sansonnens L, Schmidt H, Howling AA, Hollenstein C, Ellert C, Buechel A
Journal of Vacuum Science & Technology A, 24(4), 1425, 2006
8 Measurements and consequences of nonuniform radio frequency plasma potential due to surface asymmetry in large area radio frequency capacitive reactors
Sansonnens L, Strahm B, Derendinger L, Howling AA, Hollenstein C, Ellert C, Schmitt JPM
Journal of Vacuum Science & Technology A, 23(4), 922, 2005
9 High-efficiency p-i-n a-Si : H solar cells with low boron cross-contamination prepared in a large-area single-chamber PECVD reactor
Kroll U, Bucher C, Benagli S, Schonbachler I, Meier J, Shah A, Ballutaud J, Howling A, Hollenstein C, Buchel A, Poppeller M
Thin Solid Films, 451-52, 525, 2004
10 Reduction of the boron cross-contamination for plasma deposition of p-i-n devices in a single-chamber large area radio-frequency reactor
Ballutaud J, Bucher C, Hollenstein C, Howling AA, Kroll U, Benagli S, Shah A, Buechel A
Thin Solid Films, 468(1-2), 222, 2004