화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Development of epitaxial SiC processes suitable for bipolar power devices
Sumakeris JJ, Das MK, Ha S, Hurt E, Irvine K, Paisley MJ, O'Loughlin MJ, Palmour JW, Skowronski M, Hobgood HM, Carter CH
Materials Science Forum, 483, 155, 2005
2 Silicon carbide crystal and substrate technology: A survey of recent advances
Hobgood HM, Brady MF, Calus MR, Jenny JR, Leonard RT, Malta DP, Muller SG, Powell AR, Tsvetkov VF, Glass RC, Carter CH
Materials Science Forum, 457-460, 3, 2004
3 Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices
Jenny JR, Malta DP, Calus MR, Muller SG, Powell AR, Tsvetkov VF, Hobgood HM, Glass RC, Carter CH
Materials Science Forum, 457-460, 35, 2004
4 Large diameter 4H-SiC substrates for commercial power applications
Powell AR, Leonard RT, Brady MF, Muller SG, Tsvetkov VF, Trussell R, Sumakeris JJ, Hobgood HM, Burk AA, Glass RC, Carter CH
Materials Science Forum, 457-460, 41, 2004
5 Deformation of 4H-SiC single crystals oriented for prism slip
Zhang M, Hobgood HM, Pirouz P
Materials Science Forum, 457-460, 371, 2004
6 Generation of stacking faults in highly doped n-type 4H-SiC substrates
Zhang M, Hobgood HM, Treu M, Pirouz P
Materials Science Forum, 457-460, 759, 2004
7 Approaches to stabilizing the forward voltage of bipolar SiC devices
Sumakeris JJ, Das M, Hobgood HM, Muller SG, Paisley MJ, Ha S, Skowronski M, Palmour JW, Carter CH
Materials Science Forum, 457-460, 1113, 2004
8 High quality SiC substrates for semiconductor devices: From research to industrial production
Muller SG, Brady MF, Brixius WH, Fechko G, Glass RC, Henshall D, Hobgood HM, Jenny JR, Leonard R, Malta D, Powell A, Tsvetkov VF, Allen S, Palmour J, Carter CH
Materials Science Forum, 389-3, 23, 2002
9 The brittle-to-ductile transition in 4H-SiC
Zhang M, Hobgood HM, Demenet JL, Pirouz P
Materials Science Forum, 389-3, 767, 2002
10 Sublimation-grown semi-insulating SIC for high frequency devices
Muller SG, Brady MF, Brixius WH, Glass RC, Hobgood HM, Jenny JR, Leonard RT, Malta DP, Powell AR, Tsvetkov VF, Allen ST, Palmour JW, Carter CH
Materials Science Forum, 433-4, 39, 2002