검색결과 : 46건
| No. | Article |
|---|---|
| 1 |
Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions El Kazzi S, Smets Q, Ezzedini M, Rooyackers R, Verhulst A, Douhard B, Bender H, Collaert N, Merckling C, Heyns MM, Thean A Journal of Crystal Growth, 424, 62, 2015 |
| 2 |
Growth of high quality InP layers in STI trenches on miscut Si (001) substrates Wang G, Leys MR, Nguyen ND, Loo R, Brammertz G, Richard O, Bender H, Dekoster J, Meuris M, Heyns MM, Caymax M Journal of Crystal Growth, 315(1), 32, 2011 |
| 3 |
Electronic Properties of Silicene: Insights from First-Principles Modeling Houssa M, Pourtois G, Heyns MM, Afanas'ev VV, Stesmans A Journal of the Electrochemical Society, 158(2), H107, 2011 |
| 4 |
Removal of High-Dose Ion-Implanted 248 nm Deep UV Photoresist Using UV Irradiation and Organic Solvent Tsvetanova D, Vos R, Vanstreels K, Radisic D, Sonnemans R, Berry I, Waldfried C, Mattson D, DeLuca J, Vereecke G, Mertens PW, Parac-Vogt TN, Heyns MM Journal of the Electrochemical Society, 158(2), H150, 2011 |
| 5 |
Degradation of 248 nm Deep UV Photoresist by Ion Implantation Tsvetanova D, Vos R, Vereecke G, Parac-Vogt TN, Clemente F, Vanstreels K, Radisic D, Conard T, Franquet A, Jivanescu M, Nguyen DAP, Stesmans A, Brijs B, Mertens P, Heyns MM Journal of the Electrochemical Society, 158(8), H785, 2011 |
| 6 |
Drive current enhancement in p-tunnel FETs by optimization of the process conditions Leonelli D, Vandooren A, Rooyackers R, De Gendt S, Heyns MM, Groeseneken G Solid-State Electronics, 65-66, 28, 2011 |
| 7 |
Electrochemical Tailoring of Catalyst Nanoparticles for CNT Spatial-Dimension Control Romo-Negreira A, Cott DJ, De Gendt S, Maex K, Heyns MM, Vereecken PM Journal of the Electrochemical Society, 157(3), K47, 2010 |
| 8 |
Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates Wang G, Leys MR, Nguyen ND, Loo R, Brammertz G, Richard O, Bender H, Dekoster J, Meuris M, Heyns MM, Caymax M Journal of the Electrochemical Society, 157(11), H1023, 2010 |
| 9 |
Short-channel epitaxial germanium pMOS transistors Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM Thin Solid Films, 518, S88, 2010 |
| 10 |
P plus /n junction leakage in thin selectively grown Ge-in-STI substrates Eneman G, Yang R, Wang G, De Jaeger B, Loo R, Claeys C, Caymax M, Meuris M, Heyns MM, Simoen E Thin Solid Films, 518(9), 2489, 2010 |