검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Influence of crystal orientation and body doping on trigate transistor performance Landgraf E, Rosner W, Stadele M, Dreeskornfeld L, Hartwich J, Hofmann F, Kretz J, Lutz T, Luyken RJ, Schulz T, Specht M, Risch L Solid-State Electronics, 50(1), 38, 2006 |
| 2 |
High-resolution scanning spreading resistance microscopy of surrounding-gate transistors Alvarez D, Schomann S, Goebel B, Manger D, Schlosser T, Slesazeck S, Hartwich J, Kretz J, Eyben P, Fouchier M, Vandervorst W Journal of Vacuum Science & Technology B, 22(1), 377, 2004 |
| 3 |
Impact of technology parameters on device performance of UTB-SOI CMOS Schulz T, Pacha C, Luyken RJ, Stadele M, Hartwich J, Dreeskornfeld L, Landgraf E, Kretz J, Rosner W, Specht M, Hofmann F, Risch L Solid-State Electronics, 48(4), 521, 2004 |
| 4 |
Nanoscale FinFETs for low power applications Rosner W, Landgraf E, Kretz J, Dreeskornfeld L, Schafer H, Stadele M, Schulz T, Hofmann F, Luyken RJ, Specht M, Hartwich J, Pamler W, Risch L Solid-State Electronics, 48(10-11), 1819, 2004 |
| 5 |
High precision etching of Si/SiO2 on a high-density helicon etcher for nanoscale devices Dreeskornfeld L, Hartwich J, Kretz J, Schmitt-Landsiedel D, Loraine D, Powell K, Thomas DJ Journal of the Electrochemical Society, 150(11), G702, 2003 |
| 6 |
Design considerations for fully depleted SOI transistors in the 25-50 nm gate length regime Luyken RJ, Schulz T, Hartwich J, Dreeskornfeld L, Stadele M, Rosner W Solid-State Electronics, 47(7), 1199, 2003 |
| 7 |
Nanoscale electron beam lithography and etching for fully depleted silicon-on-insulator devices Dreeskornfeld L, Hartwich J, Kretz J, Risch L, Roesner W, Schmitt-Landsiedel D Journal of Vacuum Science & Technology B, 20(6), 2777, 2002 |
| 8 |
W/Si multilayers deposited by hot-filament MOCVD Hamelmann F, Petri SHA, Klipp A, Haindl G, Hartwich J, Dreeskornfeld L, Kleineberg U, Jutzi P, Heinzmann U Thin Solid Films, 338(1-2), 70, 1999 |