검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor Franke D, Sabelfeld N, Ebert W, Harde P, Wolfram P, Grote N Journal of Crystal Growth, 248, 421, 2003 |
| 2 |
MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits Gibis R, Kizuki H, Albrecht P, Harde P, Urmann G, Kaiser R, Kunzel H Journal of Crystal Growth, 209(2-3), 463, 2000 |
| 3 |
Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H-2 and N-2 carrier gas Schroeter-Janssen H, Roehle H, Franke D, Bochnia R, Harde P, Grote N Journal of Crystal Growth, 221, 70, 2000 |
| 4 |
Selective infill metalorganic molecular beam epitaxy of InP : Si n(+)/n(-) layers for buried collector double heterostructure bipolar transistors Schelhase S, Bottcher J, Gibis R, Harde P, Paraskevopoulos A, Kunzel H Journal of Vacuum Science & Technology B, 16(1), 210, 1998 |