화학공학소재연구정보센터
검색결과 : 22건
No. Article
1 Correlation between texture and mechanical stress durability of thin aluminum films
Nussl R, Jewula T, Ruile W, Sulima T, Hansch W
Thin Solid Films, 556, 376, 2014
2 Growth of highly textured aluminum films on LiTaO3 with optimized titanium intermediate layers
Nussl R, Senft C, Beckmeier D, Jewula T, Ruile W, Sulima T, Hansch W, Eisele I
Thin Solid Films, 519(22), 8154, 2011
3 Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
Nirschl T, Henzler S, Fischer J, Fulde M, Bargagli-Stoffi A, Sterkel M, Sedlmeir J, Weber C, Heinrich R, Schaper U, Einfeld J, Neubert R, Feldmann U, Stahrenberg K, Ruderer E, Georgakos G, Huber A, Kakoschke R, Hansch W, Schmitt-Landsiedel D
Solid-State Electronics, 50(1), 44, 2006
4 Complementary tunneling transistor for low power application
Wang PF, Hilsenbeck K, Nirschl T, Oswald M, Stepper C, Weis M, Schmitt-Landsiedel D, Hansch W
Solid-State Electronics, 48(12), 2281, 2004
5 Simulation of the Esaki-tunneling FET
Wang PF, Nirschl T, Schmitt-Landsiedel D, Hansch W
Solid-State Electronics, 47(7), 1187, 2003
6 Ag metallization with high electromigration resistance for ULSI
Hauder M, Hansch W, Gstottner J, Schmitt-Landsiedel D
Solid-State Electronics, 47(7), 1227, 2003
7 Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping
Fink C, Anil KG, Geiger H, Hansch W, Kaesen F, Schulze J, Sulima T, Eisele I
Solid-State Electronics, 46(3), 387, 2002
8 Dopant diffusion during rapid thermal oxidation
Stadler A, Sulima T, Schulze J, Fink C, Kottantharayil A, Hansch W, Baumgartner H, Eisele I, Lerch W
Solid-State Electronics, 44(5), 831, 2000
9 Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si(100) and Si(111)
Schulze J, Fink C, Sulima T, Eisele I, Hansch W
Thin Solid Films, 380(1-2), 154, 2000
10 MBE-grown vertical power-MOSFETs with 100-nm channel length
Fink C, Anil KG, Hansch W, Sedlmaier S, Schulze J, Eisele I
Thin Solid Films, 380(1-2), 207, 2000