검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
LaLuO3 higher-kappa dielectric integration in SOI MOSFETs with a gate-first process Nichau A, Ozben ED, Schnee M, Lopes JMJ, Besmehn A, Luysberg M, Knoll L, Habicht S, Mussmann V, Luptak R, Lenk S, Rubio-Zuazo J, Castro GR, Buca D, Zhao QT, Schubert J, Mantl S Solid-State Electronics, 71, 19, 2012 |
| 2 |
Electrical characterization of Omega-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with < 100 >- and < 110 > channel orientations Habicht S, Feste S, Zhao QT, Buca D, Mantl S Thin Solid Films, 520(8), 3332, 2012 |
| 3 |
Study of Arsenic ion implantation of patterned strained Si NWs Minamisawa RA, Habicht S, Knoll L, Zhao QT, Buca D, Mantl S, Kohler F, Carius R Solid-State Electronics, 60(1), 31, 2011 |
| 4 |
Silicon nanowire FETs with uniaxial tensile strain Feste SF, Knoch J, Habicht S, Buca D, Zhao QT, Mantl S Solid-State Electronics, 53(12), 1257, 2009 |