LaLuO3 higher-kappa dielectric integration in SOI MOSFETs with a gate-first process

Nichau A; Ozben ED; Schnee M; Lopes JMJ; Besmehn A; Luysberg M; Knoll L; Habicht S; Mussmann V; Luptak R; Lenk S; Rubio-Zuazo J; Castro GR; Buca D; Zhao QT; Schubert J; Mantl S

Solid-State Electronics, Vol.71, 19-24, 2012

DOI10.1016/j.sse.2011.10.014 Export Citation

LaLuO3 higher-kappa dielectric integration in SOI MOSFETs with a gate-first process

Nichau A, Ozben ED, Schnee M, Lopes JMJ, Besmehn A, Luysberg M, Knoll L, Habicht S, Mussmann V, Luptak R, Lenk S, Rubio-Zuazo J, Castro GR, Buca D, Zhao QT, Schubert J, Mantl S

The chemical reactions at the higher-kappa LaLuO3/Ti1Nx/poly-Si gate stack interface.; are in detail investigated. Electrical and structural characterization methods are employed to explore the thermal stability of the gate stack. A Ti-rich TiN metal layer degrades the gate stack performance after high temperature annealing while the gate stack with a near stoichiometric TiN layer is stable during 1000 degrees C, 5s anneals. Based on these results an integration process of TiN/LaLuO3 in a gate-first MOSFET process on SOI is shown. (C) 2011 Elsevier Ltd. All rights reserved.

Keywords:Lanthanum lutetium oxide;Gate-first