검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Field Effect Mobility in n-channel Si face 4H-SiC MOSFET with Gate oxide Grown on Aluminium Ion-implanted Material Gudjonsson G, Olafsson HO, Allerstam F, Nilsson PA, Sveinbjornsson EO, Rodle T, Jos R Materials Science Forum, 483, 833, 2005 |
| 2 |
High Field-Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment Allerstam F, Gudjonsson G, Olafsson HO, Sveinbjornsson EO, Rodle T, Jos R Materials Science Forum, 483, 837, 2005 |
| 3 |
High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material Sveinbjornsson EO, Olafsson HO, Gudjonsson G, Allerstam F, Nilsson PA, Syvajarvi M, Yakimova R, Hallin C, Rodle T, Jos R Materials Science Forum, 483, 841, 2005 |
| 4 |
Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O) Gudjonsson G, Olafsson HO, Sveinbjornsson EO Materials Science Forum, 457-460, 1425, 2004 |